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CSD17578Q5AT

MOSFET N-CH 30V 25A 8VSON


  • Manufacturer:
  • Nocochips NO: 815-CSD17578Q5AT
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 521
  • Description: MOSFET N-CH 30V 25A 8VSON (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Resistance 5.9mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17578
Number of Elements 1
Power Dissipation-Max 3.1W Ta 42W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.9m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 22.3nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 16A
Pulsed Drain Current-Max (IDM) 132A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 23 mJ
Feedback Cap-Max (Crss) 75 pF
Length 4.9mm
Width 6mm
Thickness 1mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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