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CSD17579Q5AT

MOSFET N-CH 30V 25A 8VSON


  • Manufacturer:
  • Nocochips NO: 815-CSD17579Q5AT
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 822
  • Description: MOSFET N-CH 30V 25A 8VSON (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD17579
Number of Elements 1
Power Dissipation-Max 3.1W Ta 36W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.7m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 15V
Current - Continuous Drain (Id) @ 25°C 25A Ta
Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 25A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 14A
Drain-source On Resistance-Max 0.0133Ohm
Pulsed Drain Current-Max (IDM) 105A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 14.5 mJ
Feedback Cap-Max (Crss) 52 pF
Length 4.9mm
Width 6mm
Thickness 1mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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