Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | NexFET™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Base Part Number | CSD18504 |
Number of Elements | 1 |
Power Dissipation-Max | 115W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 93W |
Case Connection | DRAIN |
Turn On Delay Time | 4.4 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 7m Ω @ 40A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 53A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
Rise Time | 5.2ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 4.2 ns |
Turn-Off Delay Time | 11.2 ns |
Continuous Drain Current (ID) | 85A |
Threshold Voltage | 1.9V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 40V |
Avalanche Energy Rating (Eas) | 88 mJ |
Height | 4.7mm |
Length | 10.16mm |
Width | 8.7mm |
Thickness | 4.58mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |