CSD18531Q5A
| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 2.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3840pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 19A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Rise Time | 7.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 2.7 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Avalanche Energy Rating (Eas) | 224 mJ |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | 1.8 V |
| Height | 1.1mm |
| Length | 4.9mm |
| Width | 6mm |
| Thickness | 1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 10 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD18531 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.1W Ta 156W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 156W |
| Case Connection | DRAIN |
| Turn On Delay Time | 4.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.6m Ω @ 22A, 10V |
See Relate Datesheet
