CSD18532NQ5B
| Parameters | |
|---|---|
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD18532 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.2W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.4m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 3.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5340pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 22A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Rise Time | 8.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 2.7 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 100A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 22A |
| Drain-source On Resistance-Max | 0.0044Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Avalanche Energy Rating (Eas) | 360 mJ |
| Length | 5mm |
| Width | 6mm |
| Thickness | 950μm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
See Relate Datesheet
