CSD19505KCS
| Parameters | |
|---|---|
| Thickness | 4.58mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD19505 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 31 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.8m Ω @ 100A, 6V |
| Vgs(th) (Max) @ Id | 3.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7820pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 150A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 62 ns |
| Continuous Drain Current (ID) | 150A |
| Threshold Voltage | 2.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 80V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Height | 4.7mm |
| Length | 10.16mm |
| Width | 8.7mm |
See Relate Datesheet
