CSD19532Q5B
| Parameters | |
|---|---|
| Avalanche Energy Rating (Eas) | 274 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.05mm |
| Length | 5mm |
| Width | 6mm |
| Thickness | 950μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD19532 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.1W Ta 195W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.9m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4810pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 100A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Rise Time | 6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 100A |
| Threshold Voltage | 2.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0057Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 400A |
See Relate Datesheet
