CSD19532Q5BT
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | CSD19532 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.1W Ta 195W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.9m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4810pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 100A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 100A |
| Drain Current-Max (Abs) (ID) | 17A |
| Drain-source On Resistance-Max | 0.0057Ohm |
| Pulsed Drain Current-Max (IDM) | 400A |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 274 mJ |
| Length | 5mm |
| Width | 6mm |
| Thickness | 950μm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
