CSD23201W10
| Parameters | |
|---|---|
| Threshold Voltage | 600mV |
| Gate to Source Voltage (Vgs) | -6V |
| Drain to Source Breakdown Voltage | 12V |
| Dual Supply Voltage | 12V |
| Nominal Vgs | 600 mV |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA, DSBGA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e1 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD23201 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Power Dissipation-Max | 1W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 24 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 82m Ω @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 325pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
| Rise Time | 19ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Fall Time (Typ) | 29 ns |
| Turn-Off Delay Time | 68 ns |
| Continuous Drain Current (ID) | 2.2A |
See Relate Datesheet
