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CSD23203WT

MOSFET CSD23203W 8V P-Ch NexFET Power MOSFET


  • Manufacturer:
  • Nocochips NO: 815-CSD23203WT
  • Package: 6-UFBGA, DSBGA
  • Datasheet: PDF
  • Stock: 404
  • Description: MOSFET CSD23203W 8V P-Ch NexFET Power MOSFET (Kg)

Details

Tags

Parameters
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 3A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) -6V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.053Ohm
Drain to Source Breakdown Voltage -8V
Feedback Cap-Max (Crss) 172 pF
Height 1mm
Length 1.5mm
Width 1.8mm
Thickness 2mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Number of Pins 6
Weight 1.700971mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Base Part Number CSD23203
Number of Elements 1
Power Dissipation-Max 750mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19.4m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 914pF @ 4V
See Relate Datesheet

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