CSD25213W10
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA, DSBGA |
| Number of Pins | 4 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Base Part Number | CSD25213 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | -0.85 |
| Power Dissipation | 1W |
| Turn On Delay Time | 510 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 47m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 478pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 4.5V |
| Rise Time | 520ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Fall Time (Typ) | 970 ns |
| Turn-Off Delay Time | 1 μs |
| Continuous Drain Current (ID) | -1.6A |
| Gate to Source Voltage (Vgs) | -6V |
| Drain to Source Breakdown Voltage | -20V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 625μm |
| Length | 0m |
| Width | 0m |
| Thickness | 650μm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
