CSD25303W1015
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFBGA, DSBGA |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | BALL |
| Base Part Number | CSD25303 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 3.9 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 58m Ω @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 4.5V |
| Rise Time | 8.6ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 7.8 ns |
| Turn-Off Delay Time | 11.3 ns |
| Continuous Drain Current (ID) | 3A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.092Ohm |
| Drain to Source Breakdown Voltage | -20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
