CSD25401Q3
| Parameters | |
|---|---|
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | NexFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Base Part Number | CSD25401 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.8W |
| Case Connection | SOURCE |
| Turn On Delay Time | 8.1 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11.7m Ω @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 14A Ta 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 4.5V |
| Rise Time | 3.9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 12.6 ns |
| Turn-Off Delay Time | 13.5 ns |
| Continuous Drain Current (ID) | 14A |
| Threshold Voltage | 850mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 60A |
| Drain to Source Breakdown Voltage | -20V |
| Dual Supply Voltage | 20V |
| Nominal Vgs | 850 mV |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
