D2SB80 D2G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | 4-SIP, GBL |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2015 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | UL RECOGNIZED |
| HTS Code | 8541.10.00.80 |
| Subcategory | Bridge Rectifier Diodes |
| Technology | Standard |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSIP-T4 |
| Number of Elements | 4 |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 10μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 15A |
| Case Connection | ISOLATED |
| Output Current-Max | 2A |
| Current - Average Rectified (Io) | 2A |
| Number of Phases | 1 |
| Non-rep Pk Forward Current-Max | 80A |
| Voltage - Peak Reverse (Max) | 800V |
| Breakdown Voltage-Min | 800V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
