Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Max Power Dissipation | 1W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 200MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 1W |
Case Connection | COLLECTOR |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 200MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 80V |
Max Collector Current | 1A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 2V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | 80V |
Transition Frequency | 200MHz |
Collector Emitter Saturation Voltage | 500mV |
Max Breakdown Voltage | 80V |
Collector Base Voltage (VCBO) | 100V |
Emitter Base Voltage (VEBO) | 5V |
hFE Min | 25 |
Continuous Collector Current | 1A |
Height | 1.65mm |
Length | 6.7mm |
Width | 3.7mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |