DDB2U50N08W1RB23BOMA1
| Parameters | |
|---|---|
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Published | 2011 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 9 |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-XUFM-X9 |
| Number of Elements | 1 |
| Configuration | COMPLEX |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (Abs) (ID) | 60A |
| Drain-source On Resistance-Max | 0.2Ohm |
| Pulsed Drain Current-Max (IDM) | 100A |
| DS Breakdown Voltage-Min | 600V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
