Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 10, HIGH RELIABILITY |
Max Power Dissipation | 200mW |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Reference Standard | AEC-Q101 |
JESD-30 Code | R-PDSO-G6 |
Operating Temperature (Min) | -55°C |
Number of Elements | 2 |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Power - Max | 200mW |
Polarity/Channel Type | NPN |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Collector Emitter Voltage (VCEO) | 300mV |
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V |
Current - Collector Cutoff (Max) | 500nA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
Collector Emitter Breakdown Voltage | 50V |
Transition Frequency | 250MHz |
Max Breakdown Voltage | 50V |
Frequency - Transition | 250MHz |
Resistor - Base (R1) | 4.7k Ω |
Resistor - Emitter Base (R2) | 47k Ω |
RoHS Status | ROHS3 Compliant |