DLE30C
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | DO-201AD, Axial |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 1998 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| HTS Code | 8541.10.00.80 |
| Terminal Form | WIRE |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 10μA @ 400V |
| Voltage - Forward (Vf) (Max) @ If | 980mV @ 3A |
| Case Connection | ISOLATED |
| Forward Current | 3A |
| Operating Temperature - Junction | 150°C Max |
| Max Surge Current | 60A |
| Output Current-Max | 1.5A |
| Application | ULTRA FAST RECOVERY |
| Max Reverse Voltage (DC) | 200V |
| Average Rectified Current | 3A |
| Number of Phases | 1 |
| Reverse Recovery Time | 35 ns |
| Peak Reverse Current | 10μA |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Peak Non-Repetitive Surge Current | 60A |
| Reverse Voltage | 200V |
| Recovery Time | 35 ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
