banner_page

DMA502010R

Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm


  • Manufacturer: Panasonic Electronic Components
  • Nocochips NO: 590-DMA502010R
  • Package: 5-SMD, Flat Leads
  • Datasheet: PDF
  • Stock: 289
  • Description: Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 5-SMD, Flat Leads
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DMA50201
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power - Max 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 210
Continuous Collector Current -100mA
Height 600μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good