Parameters | |
---|---|
Max Collector Current | 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 210 @ 2mA 10V |
Current - Collector Cutoff (Max) | 100μA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Collector Emitter Breakdown Voltage | 50V |
Max Frequency | 150MHz |
Transition Frequency | 150MHz |
Collector Emitter Saturation Voltage | 300mV |
Max Breakdown Voltage | 50V |
Collector Base Voltage (VCBO) | 60V |
Emitter Base Voltage (VEBO) | 7V |
hFE Min | 210 |
Continuous Collector Current | 100mA |
Height | 600μm |
Length | 2mm |
Width | 1.25mm |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-SMD, Flat Leads |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2011 |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Max Power Dissipation | 150mW |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | DMC50601 |
Number of Elements | 2 |
Polarity | NPN |
Element Configuration | Dual |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 150MHz |
Transistor Type | 2 NPN (Dual) |
Collector Emitter Voltage (VCEO) | 50V |