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DMC506010R

Bipolar Transistors - BJT COMP TRANS W/BLT IN RES FLT LD 2.0x2.1mm


  • Manufacturer: Panasonic Electronic Components
  • Nocochips NO: 590-DMC506010R
  • Package: 6-SMD, Flat Leads
  • Datasheet: PDF
  • Stock: 946
  • Description: Bipolar Transistors - BJT COMP TRANS W/BLT IN RES FLT LD 2.0x2.1mm (Kg)

Details

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Parameters
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA 10V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 150MHz
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 210
Continuous Collector Current 100mA
Height 600μm
Length 2mm
Width 1.25mm
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
HTS Code 8541.21.00.75
Subcategory Other Transistors
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DMC50601
Number of Elements 2
Polarity NPN
Element Configuration Dual
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 50V
See Relate Datesheet

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