DMG1029SV-7
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Weight | 3.005049mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 4Ohm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY, LOW THRESHOLD |
| Subcategory | Other Transistors |
| Max Power Dissipation | 450mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | DMG1029 |
| Pin Count | 6 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 450mW |
| Turn On Delay Time | 5.5 ns |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.7 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 500mA 360mA |
| Gate Charge (Qg) (Max) @ Vgs | 0.3nC @ 4.5V |
| Rise Time | 7.9ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 11.6 ns |
| Turn-Off Delay Time | 10.6 ns |
| Continuous Drain Current (ID) | 500mA |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.37A |
| Drain to Source Breakdown Voltage | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
