Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2013 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 52MOhm |
Additional Feature | HIGH RELIABILITY |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.4W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 10.8 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 52m Ω @ 4.2A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 808pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 4.2A Ta |
Gate Charge (Qg) (Max) @ Vgs | 10.2nC @ 4.5V |
Rise Time | 13.7ns |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 34.7 ns |
Turn-Off Delay Time | 79.3 ns |
Continuous Drain Current (ID) | 4.2A |
Threshold Voltage | -900mV |
Gate to Source Voltage (Vgs) | 8V |
DS Breakdown Voltage-Min | 20V |
Height | 1.1mm |
Length | 3mm |
Width | 1.4mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |