Parameters | |
---|---|
Number of Channels | 1 |
Power Dissipation-Max | 760mW Ta |
Element Configuration | Single |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Operating Mode | ENHANCEMENT MODE |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Power Dissipation | 1.36W |
Turn On Delay Time | 4.8 ns |
Number of Pins | 3 |
Weight | 7.994566mg |
FET Type | P-Channel |
Transistor Element Material | SILICON |
Transistor Application | SWITCHING |
Operating Temperature | -55°C~150°C TJ |
Rds On (Max) @ Id, Vgs | 90m Ω @ 2.5A, 10V |
Packaging | Tape & Reel (TR) |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 371.3pF @ 15V |
Published | 2011 |
Current - Continuous Drain (Id) @ 25°C | 2.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V |
JESD-609 Code | e3 |
Rise Time | 7.3ns |
Pbfree Code | yes |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Part Status | Not For New Designs |
Vgs (Max) | ±20V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Fall Time (Typ) | 13.4 ns |
Turn-Off Delay Time | 22.4 ns |
Continuous Drain Current (ID) | 3.8A |
Number of Terminations | 3 |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 2.5A |
Height | 1mm |
ECCN Code | EAR99 |
Length | 3mm |
Terminal Finish | Matte Tin (Sn) |
Width | 1.4mm |
Additional Feature | HIGH RELIABILITY |
Radiation Hardening | No |
Subcategory | Other Transistors |
REACH SVHC | No SVHC |
Technology | MOSFET (Metal Oxide) |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |