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DMG3418L-7

MOSFET N-CH 30V 4A SOT23


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMG3418L-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 278
  • Description: MOSFET N-CH 30V 4A SOT23 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number DMG3418
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 1.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 464.3pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Rise Time 1.6ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 10.3 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage 30V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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