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DMG4407SSS-13

Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMG4407SSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 965
  • Description: Trans MOSFET P-CH 30V 9.9A 8-Pin SO T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.45W Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 12A, 20V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2246pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.9A Ta
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Rise Time 15.4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±25V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 9.9A
Gate to Source Voltage (Vgs) 25V
DS Breakdown Voltage-Min 30V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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