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DMG4468LFG-7

Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMG4468LFG-7
  • Package: 8-PowerUDFN
  • Datasheet: PDF
  • Stock: 732
  • Description: Trans MOSFET N-CH 30V 7.62A 8-Pin DFN EP T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerUDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 990mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.46 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 11.6A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 867pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7.62A Ta
Gate Charge (Qg) (Max) @ Vgs 18.85nC @ 10V
Rise Time 14.53ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.01 ns
Turn-Off Delay Time 18.84 ns
Continuous Drain Current (ID) 7.62A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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