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DMG4468LK3-13

MOSFET N-CH 30V 9.7A TO252


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMG4468LK3-13
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 985
  • Description: MOSFET N-CH 30V 9.7A TO252 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel®
Published 2013
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.68W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.46 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 11.6A, 10V
Vgs(th) (Max) @ Id 1.95V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 867pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9.7A Ta
Gate Charge (Qg) (Max) @ Vgs 18.85nC @ 10V
Rise Time 14.53ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.01 ns
Turn-Off Delay Time 18.84 ns
Continuous Drain Current (ID) 9.7A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 48A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet

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