Parameters | |
---|---|
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 2 |
Power Dissipation-Max | 1.71W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.71W |
Case Connection | DRAIN |
Turn On Delay Time | 5.03 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 17m Ω @ 9A, 10V |
Vgs(th) (Max) @ Id | 1.6V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 798pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 10A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 5V |
Rise Time | 4.5ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 8.55 ns |
Turn-Off Delay Time | 26.33 ns |
Continuous Drain Current (ID) | 10A |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | 30V |
Pulsed Drain Current-Max (IDM) | 48A |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Weight | 3.949996g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Digi-Reel® |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
Number of Elements | 1 |