DMG563H40R
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 5-SMD, Flat Leads |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Additional Feature | BUILT IN BIAS RESISITANCE RATIO 1 |
| Max Power Dissipation | 150mW |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | DMG563 |
| Number of Elements | 2 |
| Polarity | NPN, PNP |
| Element Configuration | Dual |
| Transistor Application | SWITCHING |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) | 250mV |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA 10V / 20 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500μA, 10mA |
| Collector Emitter Breakdown Voltage | 50V |
| Max Breakdown Voltage | 50V |
| Resistor - Base (R1) | 10k Ω, 510 Ω |
| Continuous Collector Current | -100mA |
| Resistor - Emitter Base (R2) | 10k Ω, 5.1k Ω |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
