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DMG6402LDM-7

MOSFET MOSFET N-CHANNEL SOT-26


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMG6402LDM-7
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 238
  • Description: MOSFET MOSFET N-CHANNEL SOT-26 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.12W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.12W
Turn On Delay Time 3.41 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 404pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 10V
Rise Time 6.18ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.84 ns
Turn-Off Delay Time 13.92 ns
Continuous Drain Current (ID) 5.3A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.027Ohm
DS Breakdown Voltage-Min 30V
Height 1.3mm
Length 3.1mm
Width 1.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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