Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 6 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.12W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.12W |
Turn On Delay Time | 3.41 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 27m Ω @ 7A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 404pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 5.3A Ta |
Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 10V |
Rise Time | 6.18ns |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 2.84 ns |
Turn-Off Delay Time | 13.92 ns |
Continuous Drain Current (ID) | 5.3A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.027Ohm |
DS Breakdown Voltage-Min | 30V |
Height | 1.3mm |
Length | 3.1mm |
Width | 1.7mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |