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DMG6402LVT-7

MOSFET N-CH 30V 6A TSOT26


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMG6402LVT-7
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 939
  • Description: MOSFET N-CH 30V 6A TSOT26 (Kg)

Details

Tags

Parameters
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 26
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Number of Channels 1
Power Dissipation-Max 1.75W Ta
Element Configuration Single
Turn On Delay Time 3.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 498pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 11.4nC @ 10V
Rise Time 6.2ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 13.9 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Height 900μm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet

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