Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Weight | 7.994566mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 36mOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 1.3W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 810mW |
Turn On Delay Time | 54 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 25m Ω @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 151pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 6.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
Rise Time | 66ns |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 205 ns |
Turn-Off Delay Time | 613 ns |
Continuous Drain Current (ID) | 6.5A |
Threshold Voltage | 500mV |
Gate to Source Voltage (Vgs) | 12V |
Drain to Source Breakdown Voltage | 20V |
Nominal Vgs | 500 mV |
Height | 1mm |
Length | 2.9mm |
Width | 1.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |