Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2017 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
JESD-30 Code | R-PDSO-N3 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 690mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 7.6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 10m Ω @ 9.7A, 4.5V |
Vgs(th) (Max) @ Id | 800mV @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2425pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta |
Gate Charge (Qg) (Max) @ Vgs | 50.6nC @ 8V |
Rise Time | 22.2ns |
Drain to Source Voltage (Vdss) | 12V |
Drive Voltage (Max Rds On,Min Rds On) | 1.2V 4.5V |
Vgs (Max) | ±8V |
Fall Time (Typ) | 16.8 ns |
Turn-Off Delay Time | 57.6 ns |
Continuous Drain Current (ID) | 11A |
Gate to Source Voltage (Vgs) | 8V |
Height | 580μm |
Length | 2.05mm |
Width | 2.05mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Gold |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Number of Pins | 6 |