banner_page

DMN1045UFR4-7

MOSFET N-CH 12V 3.2A DFN1010-3


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN1045UFR4-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 366
  • Description: MOSFET N-CH 12V 3.2A DFN1010-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500mW Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 375pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 3.2A
Drain-source On Resistance-Max 0.064Ohm
DS Breakdown Voltage-Min 12V
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good