banner_page

DMN10H170SFG-13

MOSFET N-CH 100V 2.9A POWERDI


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN10H170SFG-13
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 945
  • Description: MOSFET N-CH 100V 2.9A POWERDI (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 940mW Ta
Element Configuration Single
Turn On Delay Time 4.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 122m Ω @ 3.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870.7pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta 8.5A Tc
Gate Charge (Qg) (Max) @ Vgs 14.9nC @ 10V
Rise Time 2.3ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 13.9 ns
Continuous Drain Current (ID) 8.5A
Gate to Source Voltage (Vgs) 20V
Height 850μm
Length 3.35mm
Width 3.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good