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DMN10H170SVT-7

MOSFET N-CH 100V 2.6A TSOT26


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN10H170SVT-7
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 393
  • Description: MOSFET N-CH 100V 2.6A TSOT26 (Kg)

Details

Tags

Parameters
Continuous Drain Current (ID) 2.6A
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 1.2W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 160m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1167pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.6A Ta
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
See Relate Datesheet

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