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DMN10H220L-13

MOSFET N-CH 100V 1.6A SOT23


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN10H220L-13
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 886
  • Description: MOSFET N-CH 100V 1.6A SOT23 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number DMN10H220
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.3W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 1.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 401pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.4A Ta
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Continuous Drain Current (ID) 1.4A
Drain-source On Resistance-Max 0.22Ohm
DS Breakdown Voltage-Min 100V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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