Parameters | |
---|---|
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 200mW |
Turn On Delay Time | 4.1 ns |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 550m Ω @ 540mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 16V |
Turn-Off Delay Time | 13.8 ns |
Continuous Drain Current (ID) | 540mA |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 0.54A |
Drain to Source Breakdown Voltage | 20V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Height | 1.1mm |
Length | 2.2mm |
Width | 1.35mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Number of Pins | 6 |
Weight | 6.010099mg |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 550mOhm |
Terminal Finish | Matte Tin (Sn) |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 20V |
Max Power Dissipation | 200mW |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 540mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | DMN2004DWK |
Pin Count | 6 |
Qualification Status | Not Qualified |
Number of Elements | 2 |