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DMN2004K-7

MOSFET N-CH 20V 0.63A SOT23-3


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN2004K-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 965
  • Description: MOSFET N-CH 20V 0.63A SOT23-3 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 550mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 350mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
Turn On Delay Time 5.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C 630mA Ta
Rise Time 8.4ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 37.6 ns
Turn-Off Delay Time 59.4 ns
Continuous Drain Current (ID) 540mA
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.54A
Drain to Source Breakdown Voltage 20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.6 V
Feedback Cap-Max (Crss) 20 pF
Height 1.1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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