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DMN2020LSN-7

MOSFET N-CH 20V 6.9A SC59


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN2020LSN-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 196
  • Description: MOSFET N-CH 20V 6.9A SC59 (Kg)

Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 12.33 ns
Turn-Off Delay Time 35.89 ns
Continuous Drain Current (ID) 6.9A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.02Ohm
DS Breakdown Voltage-Min 20V
Height 1.3mm
Length 3.1mm
Width 1.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 610mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 610mW
Turn On Delay Time 11.67 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1149pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 4.5V
Rise Time 12.49ns
Drain to Source Voltage (Vdss) 20V
See Relate Datesheet

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