DMN2028USS-13
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Vgs (Max) | ±8V |
| Number of Terminations | 8 |
| Fall Time (Typ) | 12.33 ns |
| ECCN Code | EAR99 |
| Turn-Off Delay Time | 35.89 ns |
| Continuous Drain Current (ID) | 9.8A |
| Terminal Finish | Matte Tin (Sn) |
| Threshold Voltage | 1V |
| Additional Feature | ESD PROTECTION, HIGH RELIABILITY |
| Gate to Source Voltage (Vgs) | 12V |
| Subcategory | FET General Purpose Powers |
| Drain Current-Max (Abs) (ID) | 5.6A |
| Technology | MOSFET (Metal Oxide) |
| Drain-source On Resistance-Max | 0.02Ohm |
| Terminal Position | DUAL |
| Drain to Source Breakdown Voltage | 20V |
| Height | 1.5mm |
| Terminal Form | GULL WING |
| Length | 5mm |
| Width | 4mm |
| Peak Reflow Temperature (Cel) | 260 |
| Radiation Hardening | No |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| REACH SVHC | No SVHC |
| Pin Count | 8 |
| RoHS Status | ROHS3 Compliant |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.56W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.56W |
| Turn On Delay Time | 11.67 ns |
| FET Type | N-Channel |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Transistor Application | SWITCHING |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 9.4A, 4.5V |
| Number of Pins | 8 |
| Weight | 73.992255mg |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Transistor Element Material | SILICON |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V |
| Operating Temperature | -55°C~150°C TJ |
| Current - Continuous Drain (Id) @ 25°C | 7.3A Ta |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Gate Charge (Qg) (Max) @ Vgs | 11.6nC @ 4.5V |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Rise Time | 12.49ns |
| Part Status | Active |
See Relate Datesheet
