DMN2065UW-7
| Parameters | |
|---|---|
| Weight | 6.010099mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 430mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 430mW |
| Turn On Delay Time | 3.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 56m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| Rise Time | 9.7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 7.2 ns |
| Turn-Off Delay Time | 23.8 ns |
| Continuous Drain Current (ID) | 2.8A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 2.2A |
| Drain-source On Resistance-Max | 0.065Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| Length | 2.2mm |
| Width | 1.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Number of Pins | 3 |
See Relate Datesheet
