Parameters | |
---|---|
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Additional Feature | HIGH RELIABILITY, LOW THRESHOLD |
Subcategory | FET General Purpose Power |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Reference Standard | AEC-Q101 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 150°C |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Transistor Application | SWITCHING |
Drain to Source Voltage (Vdss) | 20V |
Polarity/Channel Type | N-CHANNEL |
Continuous Drain Current (ID) | 750mA |
Drain Current-Max (Abs) (ID) | 0.75A |
Drain-source On Resistance-Max | 0.55Ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 0.47W |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Package / Case | DFN |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |