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DMN2500UFB4-7

MOSFET N-CH 20V 0.81A 3DFN


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN2500UFB4-7
  • Package: 3-XFDFN
  • Datasheet: PDF
  • Stock: 212
  • Description: MOSFET N-CH 20V 0.81A 3DFN (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 460mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 5.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 16V
Current - Continuous Drain (Id) @ 25°C 810mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 4.5V
Rise Time 7.4ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 12.3 ns
Turn-Off Delay Time 26.7 ns
Continuous Drain Current (ID) 810mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 20V
Height 350μm
Length 1.05mm
Width 650μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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