Parameters | |
---|---|
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e4 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Additional Feature | HIGH RELIABILITY |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | DMN25D0 |
Reference Standard | AEC-Q101 |
JESD-30 Code | R-PSSO-N2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 280mW Ta |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4 Ω @ 400mA, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 27.9pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 240mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 0.36nC @ 4.5V |
Drain to Source Voltage (Vdss) | 25V |
Drive Voltage (Max Rds On,Min Rds On) | 2.7V 4.5V |
Vgs (Max) | 8V |
Continuous Drain Current (ID) | 240mA |
Drain Current-Max (Abs) (ID) | 0.24A |
Drain-source On Resistance-Max | 4Ohm |
DS Breakdown Voltage-Min | 25V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |