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DMN3010LFG-7

MOSFET N-CH 30V 11A POWERDI


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN3010LFG-7
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 631
  • Description: MOSFET N-CH 30V 11A POWERDI (Kg)

Details

Tags

Parameters
Fall Time (Typ) 10.7 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Height 850μm
Length 3.35mm
Width 3.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Lead Free Lead Free
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Weight 72.007789mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 900mW Ta
Element Configuration Single
Turn On Delay Time 4.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 19.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
See Relate Datesheet

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