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DMN3010LK3-13

MOSFET N-CH 30V 43A TO252


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN3010LK3-13
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 887
  • Description: MOSFET N-CH 30V 43A TO252 (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Capacitance 2.075nF
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13.1A Ta 43A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time 19.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10.7 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 43A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0095Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 90A
RoHS Status ROHS3 Compliant
See Relate Datesheet

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