banner_page

DMN3016LK3-13

MOSFET N-CH 30V 12.4A TO252


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN3016LK3-13
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 302
  • Description: MOSFET N-CH 30V 12.4A TO252 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Capacitance 1.415nF
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Turn On Delay Time 4.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12.4A Ta
Gate Charge (Qg) (Max) @ Vgs 25.1nC @ 10V
Rise Time 16.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.6 ns
Turn-Off Delay Time 26.1 ns
Continuous Drain Current (ID) 12.4A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Height 2.29mm
Length 6.1mm
Width 6.58mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good