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DMN3025LSS-13

MOSFET N CH 30V 7.2A 8-SO


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-DMN3025LSS-13
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 847
  • Description: MOSFET N CH 30V 7.2A 8-SO (Kg)

Details

Tags

Parameters
Power Dissipation-Max 1.4W Ta
Turn On Delay Time 3.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 641pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7.2A Ta
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Rise Time 4.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.3 ns
Turn-Off Delay Time 22.3 ns
Continuous Drain Current (ID) 7.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Height 1.5mm
Length 4.95mm
Width 3.95mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 73.992255mg
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Configuration Single
Number of Channels 1
See Relate Datesheet

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