DMN3026LVT-7
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Capacitance | 643pF |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.2W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 2.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 643pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
| Rise Time | 2.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 12.1 ns |
| Continuous Drain Current (ID) | 6.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.023Ohm |
| Drain to Source Breakdown Voltage | 30V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
